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ACI Avances en Ciencias e Ingenierías

SECTION C: ENGINEERING

Vol. 4 No. 1 (2012)

Ultra-Thin Depleted Silicon On Insulator MOSFET: a simulation based on COMSOL Multiphysics

DOI
https://doi.org/10.18272/aci.v4i1.88
Submitted
August 12, 2015

Abstract

We use the MOS transistor model from COMSOL [1] as a template to develop our own UT-FD-SOI-MOSFET with an ultra-thin geometry (Channel thickness = 10nm). SOI-MOSFETs are used to reduce short channel effect problems in actual MOSFET structures and to enable further miniaturization. Our model shows a linear dependence of the front Threshold Voltage with the Back Gate Voltage, which has been reported experimentally by [2] and theoretically by [3].

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References

  1. Multiphysics 2006. "COMSOL Multiphysics Model Library". TM COMSOL.
  2. Ohata, A., Cass, M., and Cristoloveanu, S. 2007. "Front -and back- channel mobility in ultrathin SOI-MOSFETs by front-gate split cv method". Solid State Electronics. 5484-5492
  3. Hyung-Kyu, L. and Fossum, J. 1983. "Threshold voltage of thin-film silicon-on-insulator (sol) MOSFETs". IEEE Transactions on Electron Devices. 30. 1244-1251
  4. Moore, G. 1965. "Cramming more components onto integrated circuits". Electronics. 38. 82-85.
  5. Trojman, L. "Charge Carrier Mobility for Advanced High-metal Gate MOSFET in CMOS Technology" PhD thesis. Katholieke Universiteit Leuven, 2009.
  6. Lujan, G. "Advanced gate concepts for sub 45nm devices" PhD thesis. IMEC vzw 2005.
  7. Liou, J., Cerdeira, A., Estrada, M., Yue, Y., Ortiz-Conde, A., and García, F. 2002. "A review of recent mosfet threshold voltage extraction methods". Microelectronics Reliability. 42, 583-596.
  8. White, M., Sharma, U., and Booth, R. 1989. "Static and Dynamic Transconductance of MOSFET's". IEEE Transactions on Electron Devices. 36 (5).
  9. Colinge, J. 1985. "Transconductance of silicon-on-insulator (SOI) MOSFET's". IEEE Electron Device Letters.

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