Vol. 6 No. 1 (2014), SECTION C: ENGINEERING
Vol. 6 No. 1 (2014)

TCAD Simulation for ultrathin body and buried oxide fully depleted silicon-on-insulator MOSFET: a comparison between COMSOL and Sentaurus

SECTION C: ENGINEERING
Published 2014-06-13
Luis Miguel Prócel
Universidad San Francisco de Quito
Lionel Trojman
Universidad San Francisco de Quito
Portada: Volumen 6 - Número 1
PDF (Spanish)

Keywords

SOI-MOSFET
TCAD-simulation
Sentaurus
Poisson"™s equation
driftdiffusion equations

How to Cite

Prócel, L. M., & Trojman, L. (2014). TCAD Simulation for ultrathin body and buried oxide fully depleted silicon-on-insulator MOSFET: a comparison between COMSOL and Sentaurus. ACI Avances En Ciencias E Ingenierías, 6(1). https://doi.org/10.18272/aci.v6i1.163
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Abstract

In the present work, we develop a model for simulating an ultrathin body (10nm) and buried oxide (20nm) fully-depleted silicon-on-insulator MOSFET with SiO2 gate oxide (5nm) by using TCAD-Sentaurus software. We performed DC-simulations for studying the behavior of the threshold voltage and the transconductance. Furthermore, AC-simulations were performed for studying the inversion capacitance and the inversion charge. We compare our results with similar simulations carried out in a previous work in which COMSOL-Multiphysics software was used. We have obtained similar results in both works. However, Sentaurus features more interesting details like introducing a more realistic picture of the physical mechanisms of such complex devices.

PDF (Spanish)

References

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