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ACI Avances en Ciencias e Ingenierías

SECCIÓN C: INGENIERÍAS

Vol. 2 Núm. 2 (2010)

EOT sub-nanométrico y degradación de la movilidad: ¿hacia un límite físico con las técnicas de fabricación modernas?

DOI
https://doi.org/10.18272/aci.v2i2.35
Enviado
julio 2, 2015
Publicado
2010-06-01

Resumen

En este artículo investigamos un problema mayor de la microelectrónica moderna. Para reducir el EOT y aumentar el desempeño del MOSFET, la industria tiene que introducir el material high-K, como el Hf. Pero eso genera una degradación de la movilidad y una pérdida de la rapidez de los dispositivos. Explicamos esta degradación con un modelo muy sencillo para familiarizar al lector con el concepto de movilidad. Después nos enfocamos en dos procesamientos optimizados (Fully-Silicid con HfSiON y Metal Gate con HfO2) para reducir el EOT y causar un mínimo de defectos en el film. Un resultado muy impor­tante es que podemos lograr un EOT sub-nanométrico en los dos casos ya que esto fue considerado imposible con el FuSi/HfSiON. Otro resultado importante es que en los dos casos la degradación de la movilidad es muy parecida a pesar de que los dos procesamien­tos generan una pila de compuerta de naturaleza química muy diferente. Concluimos que con las técnicas de deposición moderna no se controla la calidad del dieléctrico a partir de 0.8 nm y sugerimos cambiar el esquema de integración con un "gate last".

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