Análisis macrocinético de la infiltración química de vapor de capas de Si y Si/SiC en estructuras biomórficas de carbono

Daniela Almeida Streitwieser

Resumen

En este artículo se presenta el modelo matemático desarrollado para describir y predecir el proceso de in­filtración y deposición de capas de Si y Si/SiC a partir de los sistemas de precursores: metiltriclorosilano (MTS)/hidrógeno y Tetracloruro de Silicio/hidrógeno. Este modelo se basa en la cinética obtenida en el análisis experimental de la deposición sobre substratos no porosos, en el modelo geométrico desarrollado para describir la estructura porosa de las preformas de carbono y en el cálculo de Módulo de Thiele y del factor de infiltración a partir del balance de masa. Finalmente se comprobaron los resultados del modelo matemática comparando la homogeneidad de la infiltración en preformas de carbono con un microscopio SEM.


DOI: http://dx.doi.org/10.18272/aci.v1i1.9

Palabras clave

Chemical Vapor Deposition (CVD); CVI; biomorphic ceramics; infiltration factor

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