DFT study of the effect in surface energy of metallic overlayers in semiconductors
PDF (Spanish)

Keywords

Metallic overlayers
Pb/Ge
Ag/Si
DFT

How to Cite

Cuesta, J., Basile, L., & González, S. (2012). DFT study of the effect in surface energy of metallic overlayers in semiconductors. ACI Avances En Ciencias E Ingenierías, 4(1). https://doi.org/10.18272/aci.v4i1.76

Abstract

The surface energy of various systems: semiconductors (Ge and Si), metals (Ag and Pb) and metallic overlayers on semiconductors Ag/Ge and Pb/Si) have been calculated using a DFT approximation. The Pb(111) and Ag(111) adlayers on Si and Ge(111) surfaces had been modeled using the periodic supercell approach. Self-consistent field energy periodic calculations for bulk and surfaces of Ge, Si, Pb and Ag, with 12, 11, 10, 9, 8, 7 and 6 layers and SC12-nMn (where SC is Ge or Si; M is Ag and Pb, respectively and n is the number of layers) metallic adlayers on semiconductor super-system slab models were calculated using plane wave density functional theory, in particular employing the Perdew Wang (PW91) functional. The metallic adlayers on semiconductors modify its surface energy and vice versa. The values for SC12-nMn systems follow a sinusoidal trend in similar way to for semiconductors, but softer. The surface energy values lay in between those corresponding to semiconductors and metals. These results indicate that if the number of metallic overlayers on a semiconductor can be controlled then the surface energy can be addressed.

PDF (Spanish)

References

Chen, J., Menning, C., and Zellner, M. 2008. "Monolayer Bimetallic Surfaces: Experimental and Theoretical Studies of Trends in Electronic and Chemical Properties". Surface Science Reports. 63, 201-254.

Sinfelt, J. 1983. "Bimetallic Catalysts: Discoveries, Concepts and Applications", JohnWiley and Sons.

Bartholomew, C. and Farrauto, R. 2006. "Fundamentals of Industrial Catalytic Processes".

Campbell, C. 1990. "Bimetallic Surface Chemistry". Annual Review of Physical Chemistry. 41, 775-837.

Rodriguez, J. 1996. "Physical and Chemical Properties of Bimetallic Surfaces". Surface Science Reports. 24, 225-287.

Goodman, D. 1996. "Correlations Between Surface Science Models and "Real-World" Catalysts". Journal of Physical Chemistry. 100, 13090-13102.

Kandel, D. and Kaxiras, E. 1999. "The Surfactant Effect in Semiconductor Thin-Film Growth". Solid State Physics. 54, 219-250, A250, B250, C250, D250, 251-262.

Wei, C. and Chou, M. 2003. "Effects of the Substrate on Quantum Well States: A First-Principles Study for Ag/Fe(100)". Physical Review B. 68, 2-6.

Bauer, E. 1958. "Phänomenologische Theorie der Kristallabscheidung an Oberflächen". I. Zeitschrift für Kristallographie. 110, 372-394.

Krupski, A. 2011. "Growth of Sn on Mo(110) Studied by AES and STM". Surface Science. 605, 1291-1297.

Mathew, S., Satpati, B., Joseph, B., and Dev, B. 2005. "Role of Pb for Ag Growth on H-Passivated Si(100) Surfaces". Applied Surface Science. 249, 31-37.

Roesler, J., Miller, T., and Chiang, T.-C. 1996. "Structure Determination of Ordered 1/3 = Monolayer Pb on Ge(111) by Photoelectron Holography". Surface Science. 348, 161-167.

Lay, G., Hricovini, K., and Bonnet, J. 1989. "Synchrotron Radiation Investigation and Surface Spectroscopy Studies of Prototypical Systems: Lead Semiconductor Interfaces". Applied Surface Science. 41-42, 25-37.

Saranin, A. e. a. 1999. "Ag-Induced Structural Transformations on Si(111): Quantitative Investigation of the Si Mass Transport". Surface Science. 429, 127-132.

Hirayama, H., Komizo, T., Kawata, T., and Takayanagi, K. 2001. "Optical Second Harmonic Generation Spectrum of Ag/Si(111) Reconstructed Surfaces". Physical Review B. 63, 155413-155418.

Yamamoto, Y. 1992. "Observation of Superstructures Induced by Ag Adsorption on a Si(110) Surface". Japanese Journal of Applied Physics. 31, 2241-2242.

Deng, D. and Suzuki, T. 2005. "Nucleation and Growth of Si(111)-3x3-Ag Investigated in Situ Using Second Harmonic Generation". Physical Review B. 72, 085308.

Tong, X. et.al. 1998. "STM Observations of Ag Adsorption on the Si(111) -√3x √3-Ag Surface at Low Temperatures". Surface Science. 408, 146-159.

Zhang, Z., Niu, Q., and Shih, C.-K. 1998. " "˜Electronic Growth"™ of Metallic Overlayers on Semiconductor Substrates". Physical Review Letters. 80, 5381-5384.

Basile, L., Hong, H., Czoschke, P., and Chiang, T. C. 2004. "X-Ray Studies of the Growth of Smooth Ag Films on Ge(111)-c(2x8)". Applied Physics Letters. 84, 4995.

Hong, H. et.al. 2003. "Alternating Layer and Island Growth of Pb on Si by Spontaneous Quantum Phase Separation". Physical Review Letters. 90, 1-4.

Jurczyszyn, L., Radny, M.W., and Smith, P. 2011. "Pb Chain-Like Structures on the Clean Si(001) Surface U° a DFT Study". Surface Science. 605, 1881-1888.

Li, W.-J. e. a. 2011. "Growth and Stability of Ultra-Thin Pb Films on Pb/Si(111)-α-√3x √3". Surface Rev iew and Letters. 18, 77-82.

<http://www.webelements.com> webelements.at

Hohenberg, P. 1964. "Inhomogeneous Electron Gas". Physical Review. 136, B864-B871.

Kohn, W. and Sham, L. 1965. "Self-Consistent Equations Incluiding Exchange and Correlation Effects". Physical Review. 140, A1133-A1138.

Kresse, G. and Furthmüller, J. 1996. "Efficient Iterative Schemes for Ab Initio Total-Energy Calculations Using a Plane-Wave Basis Set". Physical review. B, Condensed matter. 54, 11169-11186.

Perdew, J. and Wang, Y. 1992. "Accurate and Simple Analytic Representation of the Electron-Gas Correlation Energy". Physical Review B. 45, 13244-13249.

Blöchl 1994. "P.E. Projector Augmented-Wave Method". Physical Review B. 50, 17953-17979.

Kresse, G. and Joubert, D. 1999. "From Ultrasoft Pseudopotentials to the Projector Augmented-Wave Method". Physical Review B. 59, 1758-1775.

Monkhorst, H. and Pack, J. 1976. "Special Points for Brillouin-Zone Integrations". Physical Review B. 13, 5188-5192.

Methfessel, M. and Paxton, A. 1989. "High-Precision Sampling for Brillouin-Zone Integration in Metals". Physical Review B. 40, 3616-3621.

Copyright notice

Authors who publish in the journal ACI Avances en Ciencias e Ingenierías accept the following terms:

  1. The authors will retain their copyright and guarantee the journal the right of first publication of their work, which will be simultaneously subject to the Creative Commons Attribution License that allows third parties to share the work provided that its author and its first publication in this journal is indicated.
  2. Authors may adopt other non-exclusive license agreements for the distribution of the published version of the work, thereby being able to publish it in a monographic volume or reproduce it in other ways, provided that the initial publication in this journal is indicated.
  3. Authors are permitted and advised to disseminate their work over the Internet:
    1. Before submission to the journal, authors can deposit the manuscript in pre-publication files/repositories (preprint servers/repositories), including arXiv, bioRxiv, figshare, PeerJ Preprints, SSRN, and others, which can produce interesting exchanges and increase citations of the published work (see The effect of open access).
    2. After submission, it is recommended that authors deposit their article in their institutional repository, personal website, or scientific social network (such as Zenodo, ResearchGate or edu).