Keywords
Modeling
COMSOL Multiphysics
Threshold Voltage
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Abstract
We use the MOS transistor model from COMSOL [1] as a template to develop our own UT-FD-SOI-MOSFET with an ultra-thin geometry (Channel thickness = 10nm). SOI-MOSFETs are used to reduce short channel effect problems in actual MOSFET structures and to enable further miniaturization. Our model shows a linear dependence of the front Threshold Voltage with the Back Gate Voltage, which has been reported experimentally by [2] and theoretically by [3].
References
Multiphysics 2006. "COMSOL Multiphysics Model Library". TM COMSOL.
Ohata, A., Cass, M., and Cristoloveanu, S. 2007. "Front -and back- channel mobility in ultrathin SOI-MOSFETs by front-gate split cv method". Solid State Electronics. 5484-5492
Hyung-Kyu, L. and Fossum, J. 1983. "Threshold voltage of thin-film silicon-on-insulator (sol) MOSFETs". IEEE Transactions on Electron Devices. 30. 1244-1251
Moore, G. 1965. "Cramming more components onto integrated circuits". Electronics. 38. 82-85.
Trojman, L. "Charge Carrier Mobility for Advanced High-metal Gate MOSFET in CMOS Technology" PhD thesis. Katholieke Universiteit Leuven, 2009.
Lujan, G. "Advanced gate concepts for sub 45nm devices" PhD thesis. IMEC vzw 2005.
Liou, J., Cerdeira, A., Estrada, M., Yue, Y., Ortiz-Conde, A., and García, F. 2002. "A review of recent mosfet threshold voltage extraction methods". Microelectronics Reliability. 42, 583-596.
White, M., Sharma, U., and Booth, R. 1989. "Static and Dynamic Transconductance of MOSFET's". IEEE Transactions on Electron Devices. 36 (5).
Colinge, J. 1985. "Transconductance of silicon-on-insulator (SOI) MOSFET's". IEEE Electron Device Letters.
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