PRÓCEL, Luis Miguel; TROJMAN, Lionel. TCAD Simulation for ultrathin body and buried oxide fully depleted silicon-on-insulator MOSFET: a comparison between COMSOL and Sentaurus. ACI Avances en Ciencias e Ingenierías, [S. l.], v. 6, n. 1, 2014. DOI: 10.18272/aci.v6i1.163. Disponível em: https://revistas.usfq.edu.ec/index.php/avances/article/view/163. Acesso em: 30 apr. 2026.